Silicon (Si) Wafer, Prime Grade, Type: P-Type Dia:76.2 mm (3 Inch), Orientation:<100>, Thickness:480 ± 15 micron, Resistivity: 0.001-0.009 ohm-cm, Single Side Polished (SSP) Email us " sales@boyanoptical.com " for more details .
Product Description
Introducing our top-tier semiconductor material, the 3 Inch Silicon Wafer with Prime Grade. This high-quality wafer is designed for advanced electronic applications, delivering unrivaled purity and consistency for superior performance and accuracy in all your technology needs. Elevate your projects with this premium silicon wafer today!
Product Features:
- 3 Inch diameter silicon wafer
- Prime Grade for top-tier performance
- High purity and consistency
- Superior performance and accuracy
- Ideal for advanced electronic applications
- Elevate your projects with high-quality silicon wafer
Applicable Groups:
- Electronics manufacturers
- Semiconductor companies
- Research institutions
- Technology enthusiasts
Applicable Scenarios:
- Semiconductor fabrication
- Electronics research and development
- Sensor development
- Semiconductor testing
- Technology prototyping
Cost Performance:
- Competitive pricing for top-tier semiconductor material
- Superior performance and accuracy for value
- Long-lasting durability and reliability
- Cost-effective solution for advanced electronic applications
Elevate your projects with our 3 Inch Silicon Wafer with Prime Grade today and experience the potential of top-tier semiconductor material. Unlock superior performance and accuracy for all your technology needs with this high-quality silicon wafer. Order now and take your projects to the next level!
Silicon wafers are thin circular disks made from single crystal silicon and are a crucial component in the production of various electronic devices. These wafers are typically used in the manufacturing of semiconductors, solar cells, and other electronic components due to their excellent electrical properties and high chemical stability.
The 3-inch diameter silicon wafer is a common size in the industry and is widely used for producing a wide range of devices. These wafers are highly sought after for their superior quality, uniformity, and reliability, making them ideal for a variety of applications.
One of the key advantages of using a single crystal silicon wafer is its high purity and crystalline structure. This results in excellent electrical properties, such as high carrier mobility and low defect density, which are essential for the performance of electronic devices. The high-quality surface of the wafer also allows for precise patterning of features, making it suitable for the fabrication of intricate microchips and circuits.
In terms of production orientation, the silicon wafer can be manufactured in various orientations, such as <100>, <111>, and <110>. Each orientation offers unique properties that can be tailored to specific requirements in electronic device manufacturing. For example, the <100> orientation is commonly used for the fabrication of CMOS (complementary metal-oxide-semiconductor) devices, while the <111> orientation is preferred for certain high-speed applications.
The 3-inch diameter silicon wafer is widely used in the production of semiconductor devices, such as integrated circuits, memory chips, and microprocessors. These wafers are also used in the manufacturing of solar cells, where they serve as the substrate for depositing various layers of materials to convert sunlight into electricity. The high purity and excellent electrical properties of the silicon wafer make it an essential component in the production of high-efficiency solar panels.
Overall, the 3-inch diameter single crystal silicon wafer is a versatile and reliable substrate for a wide range of applications in the electronics industry. Its high-quality surface, uniformity, and excellent electrical properties make it an ideal choice for producing advanced semiconductor devices and solar cells. With the ability to be customized to specific production orientations, this silicon wafer offers unparalleled performance and reliability for electronic device manufacturing.
About our products :
New Crystal | ||||
DyScO3 | GdScO3 | PrScO3 | NdScO3 | |
MnO | CeO2 | Cu2O | Fe3O4 | |
SnO2 | Fe2O3 | ZnO/Al2O3 | ||
superconducting thin film | ||||
SrTiO3 | LaAlO3 | YSZ | MgO | |
NdGaO3 | KTaO3 | SrLaAlO4 | ||
Functional epitaxial thin films | ||||
SiO2 + Si | GaN on Sapphire wafer | Pt/Ti/SiO2/Si wafer | ||
Magnet ferroelectric thin film substrate | ||||
GGG substrate | Nb:SrTiO3 substrate | Fe:SrTiO3 substrate | PMN-PT substrate | |
Photo Transistor substrate | ||||
TiO2 Rutile substrate | SiO2 quartz monocrystal substrate | quartz glass substrate | YAlO3 substrate | |
YAG substrate | LiNbO3 substrate | LiTaO3 substrate | ||
Semiconducting crystal substrate | ||||
SOI Si+SiO2+Si | Ge substrate | Si substrate | InP substrate | |
InAs substrate | InSb substrate | |||
Fluo-chloride crystal substrate | ||||
MgF2 substrate | CaF2 substrate | BaF2 substrate | LiF substrate | |
KCl substrate | NaCl substrate | KBr substrate | ||
III-V crystal substrate | ||||
Sapphire wafer | GaN monocrystal substrate | LiAlO2 substrate | MgAl2O4 substrate | |
II-VI crystal substrate | ||||
ZnO high resistivity substrate | ZnO low resistivity substrate | Ga:ZnO substrate | SiC substrate | |
ceramic substrate | ||||
Al2O3 96% substrate | AlN ceramic substrate | YSZ ceramicsubstrate | ||
Other materials | ||||
Cu metal monocrystalsubstrate | Al metal monocrystalsubstrate | Mg metal monocrystalsubstrate | KTa(1-x)Nb(x)O3 | |
K9 glass substrate | Sapphire Tube | Ruby Tube |
Email: sales@boyanoptical.com
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Add.: No.5 YanZheng Zhong Road, Wujin District, Changzhou City, Jiangsu Province
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